| Autor: |
E. Simoen, B. J. O’Sullivan, N. Ronchi, G. Van den Bosch, D. Linten, J. Van Houdt |
| Jazyk: |
angličtina |
| Rok vydání: |
2021 |
| Předmět: |
|
| Zdroj: |
AIP Advances, Vol 11, Iss 1, Pp 015219-015219-4 (2021) |
| Druh dokumentu: |
article |
| ISSN: |
2158-3226 |
| DOI: |
10.1063/5.0029833 |
| Popis: |
The low-frequency noise of planar transistors with ferroelectric Si-doped HfO2 as a gate dielectric is investigated and compared with that of undoped HfO2 reference devices. Predominantly 1/f-like spectra have been observed, which are governed by carrier number fluctuations or trapping in the gate stack. The corresponding noise power spectral density is about a factor of three higher for the reference devices, indicating that Si-doping reduces in a way similar to the trap density in the HfO2 layer. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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