| Autor: |
Hao Ji, Yehui Wei, Pengfei Ma, Ran Jiang |
| Jazyk: |
angličtina |
| Rok vydání: |
2018 |
| Předmět: |
|
| Zdroj: |
IEEE Journal of the Electron Devices Society, Vol 6, Pp 81-84 (2018) |
| Druh dokumentu: |
article |
| ISSN: |
2168-6734 |
| DOI: |
10.1109/JEDS.2017.2771956 |
| Popis: |
The charge trapping characteristics in the metal-oxide-nitride-oxide-silicon memory with separated trapping layer were investigated. Charge injection was enhanced for the reduction of effective oxide thickness of the gate dielectric. High program/erase speed as well as large shift of the threshold voltage were obtained. Charges injection was improved according to the constant current stress measurement. The application of separated charge trapping layer can considerably improve the performance of charge trapping memory. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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