Crystallization of HfO2 thin films and their influence on laser induced damage

Autor: Balogh-Michels Zoltán, Stevanovic Igor, Frison Ruggero, Bächli Andreas, Schachtler Daniel, Gischkat Thomas, Neels Antonia, Stuck Alexander, Botha Roelene
Jazyk: angličtina
Rok vydání: 2020
Předmět:
Zdroj: EPJ Web of Conferences, Vol 238, p 12004 (2020)
Druh dokumentu: article
ISSN: 2100-014X
DOI: 10.1051/epjconf/202023812004
Popis: We present our investigation on the crystallization of IBS HfO2 on (0001) SiO2. The crystallization was studied by in-situ XRD. The activation energy was 2.6±0.5 eV. The growth follows a two-dimensional mode. LIDT measurements (5000-on-1) with 10 ns pulses at 355 nm on 3QWT HfO2 layers shows that the crystallization leads to increase of the laser irradiation resistance. The 0%-LIDT of the as coated sample was 3.1 J/cm2 and increased to 3.7 J/cm2 after 5h @ 500°C.
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