| Autor: |
Laura B. Ruppalt, Erin R. Cleveland, James G. Champlain, Brian R. Bennett, Sharka M. Prokes |
| Jazyk: |
angličtina |
| Rok vydání: |
2014 |
| Předmět: |
|
| Zdroj: |
AIP Advances, Vol 4, Iss 12, Pp 127153-127153-6 (2014) |
| Druh dokumentu: |
article |
| ISSN: |
2158-3226 |
| DOI: |
10.1063/1.4905452 |
| Popis: |
In this letter we report the efficacy of a hydrogen plasma pretreatment for integrating atomic layer deposited (ALD) high-k dielectric stacks with device-quality p-type GaSb(001) epitaxial layers. Molecular beam eptiaxy-grown GaSb surfaces were subjected to a 30 minute H2/Ar plasma treatment and subsequently removed to air. High-k HfO2 and Al2O3/HfO2 bilayer insulating films were then deposited via ALD and samples were processed into standard metal-oxide-semiconductor (MOS) capacitors. The quality of the semiconductor/dielectric interface was probed by current-voltage and variable-frequency admittance measurements. Measurement results indicate that the H2-plamsa pretreatment leads to a low density of interface states nearly independent of the deposited dielectric material, suggesting that pre-deposition H2-plasma exposure, coupled with ALD of high-k dielectrics, may provide an effective means for achieving high-quality GaSb MOS structures for advanced Sb-based digital and analog electronics. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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