| Autor: |
Donald B. Hondongwa, Eric R. Fossum |
| Jazyk: |
angličtina |
| Rok vydání: |
2018 |
| Předmět: |
|
| Zdroj: |
IEEE Journal of the Electron Devices Society, Vol 6, Pp 413-419 (2018) |
| Druh dokumentu: |
article |
| ISSN: |
2168-6734 |
| DOI: |
10.1109/JEDS.2018.2792311 |
| Popis: |
We present a methodology for generating built-in drift fields in large photodiodes. With the aid of TCAD we demonstrate how non-uniform doping profiles can be implemented in a standard CMOS process using a single additional mask and controlled using the implant conditions and mask geometry. We demonstrate that the resulting doping profile creates a built-in drift field and simulates the effect of the drift field on the charge transfer speed. We show that implementing a drift field can improve charge transfer characteristics of the photodiode. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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