| Autor: |
Shahad Khudiar, Uday Nayef, Falah Mutlak |
| Jazyk: |
angličtina |
| Rok vydání: |
2022 |
| Předmět: |
|
| Zdroj: |
Journal of Applied Sciences and Nanotechnology, Vol 2, Iss 2, Pp 64-69 (2022) |
| Druh dokumentu: |
article |
| ISSN: |
2788-6867 |
| DOI: |
10.53293/jasn.2021.3646.1032 |
| Popis: |
Photoelectrochemical etching (PECE) was used to prepare porous silicon (PS) layers of polished surfaces of (100) n-type silicon wafers with a resistance of 0.1-100 μm and thickness of 600 ± 25 μm. The directed slices are to be catalyzed at different etching times (5, 15, 25 min) with a constant Hydrofluoric acid of 20% and with a fixed current density of 20 mA/cm². The porous silicon morphology was investigated using scanning electron microscopy (SEM). Samples were formed by different engraving times. It revealed that the silicon surface has a layer of sponge-like structure, with the average pore diameter (740±1 nm, 550±2 nm,460±3 nm) of the porous silicon increasing as the etching time increased. PS Al PS /Si /Al photodetectors were found to work as a photodetector over a wide wavelength responsivity. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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