| Autor: |
Lu Zhao, Hongxia Liu, Xing Wang, Yongte Wang, Shulong Wang |
| Jazyk: |
angličtina |
| Rok vydání: |
2019 |
| Předmět: |
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| Zdroj: |
Nanomaterials, Vol 9, Iss 5, p 697 (2019) |
| Druh dokumentu: |
article |
| ISSN: |
2079-4991 |
| DOI: |
10.3390/nano9050697 |
| Popis: |
Effects of the La2O3 passivation layer thickness on the interfacial properties of high-k/Ge interface are investigated systematically. In a very thin range (0~15 cycles), the increase of La2O3 passivation layer deposition cycles improves the surface smoothness of HfO2/Ge structures. The capacitance-voltage (C-V) characteristics show that the thickness of La2O3 passivation layer can affect the shift of flat band voltage (VFB), hysteretic behaviors, and the shapes of the dual-swept C-V curves. Moreover, significant improvements in the gate leakage current and breakdown characteristics are also achieved with the increase of La2O3 interlayer thickness. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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