| Autor: |
Jaeun Eom, In Hak Lee, Jung Yun Kee, Minhyun Cho, Jeongdae Seo, Hoyoung Suh, Hyung-Jin Choi, Yumin Sim, Shuzhang Chen, Hye Jung Chang, Seung-Hyub Baek, Cedomir Petrovic, Hyejin Ryu, Chaun Jang, Young Duck Kim, Chan-Ho Yang, Maeng-Je Seong, Jin Hong Lee, Se Young Park, Jun Woo Choi |
| Jazyk: |
angličtina |
| Rok vydání: |
2023 |
| Předmět: |
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| Zdroj: |
Nature Communications, Vol 14, Iss 1, Pp 1-10 (2023) |
| Druh dokumentu: |
article |
| ISSN: |
2041-1723 |
| DOI: |
10.1038/s41467-023-41382-8 |
| Popis: |
Abstract We investigate the voltage control of magnetism in a van der Waals (vdW) heterostructure device consisting of two distinct vdW materials, the ferromagnetic Fe3-x GeTe2 and the ferroelectric In2Se3. It is observed that gate voltages applied to the Fe3-x GeTe2/In2Se3 heterostructure device modulate the magnetic properties of Fe3-x GeTe2 with significant decrease in coercive field for both positive and negative voltages. Raman spectroscopy on the heterostructure device shows voltage-dependent increase in the in-plane In2Se3 and Fe3-x GeTe2 lattice constants for both voltage polarities. Thus, the voltage-dependent decrease in the Fe3-x GeTe2 coercive field, regardless of the gate voltage polarity, can be attributed to the presence of in-plane tensile strain. This is supported by density functional theory calculations showing tensile-strain-induced reduction of the magnetocrystalline anisotropy, which in turn decreases the coercive field. Our results demonstrate an effective method to realize low-power voltage-controlled vdW spintronic devices utilizing the magnetoelectric effect in vdW ferromagnetic/ferroelectric heterostructures. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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