| Autor: |
William Anderson Lee Sanchez, Shreekant Sinha, Po-Yu Wang, Ray-Hua Horng |
| Jazyk: |
angličtina |
| Rok vydání: |
2023 |
| Předmět: |
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| Zdroj: |
Frontiers of Optoelectronics, Vol 16, Iss 1, Pp 1-11 (2023) |
| Druh dokumentu: |
article |
| ISSN: |
2095-2767 |
| DOI: |
10.1007/s12200-023-00086-z |
| Popis: |
Abstract Thin film p-side up vertical-cavity surface-emitting lasers (VCSELs) with 940 nm wavelength on a composite metal (Copper/Invar/Copper; CIC) substrate has been demonstrated by twice-bonding transfer and substrate removing techniques. The CIC substrate is a sandwich structure with a 10 µm thick Copper (Cu) layer/30 µm thick Invar layer/10 µm thick Cu layer. The Invar layer was composed of Iron (Fe) and Nickel (Ni) with a proportion of 70:30. The thermal expansion coefficient of the composite CIC metal can match that of the GaAs substrate. It results that the VCSEL layers can be successfully transferred to CIC metal substrate without cracking. At 1 mA current, the top-emitting VCSEL/GaAs and thin-film VCSEL/CIC had a voltage of 1.39 and 1.37 V, respectively. The optical output powers of VCSEL/GaAs and VCSEL/CIC were 21.91 and 24.40 mW, respectively. The 50 µm thick CIC substrate can play a good heat dissipation function, which results in improving the electrical and optical characteristics of thin film VCSELs/CIC. The VCSEL/CIC exhibited a superior thermal management capability as compared with VCSEL/GaAs. The obtained data suggested that VCSELs on a composite metal substrate not only affected significantly the characteristics of thin film VCSEL, but also improved considerably the device thermal performance. Graphical Abstract |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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