An Ultra-Wideband THz/IR Metamaterial Absorber Based on Doped Silicon

Autor: Huafeng Liu, Kai Luo, Shihao Tang, Danhua Peng, Fangjing Hu, Liangcheng Tu
Jazyk: angličtina
Rok vydání: 2018
Předmět:
Zdroj: Materials, Vol 11, Iss 12, p 2590 (2018)
Druh dokumentu: article
ISSN: 1996-1944
DOI: 10.3390/ma11122590
Popis: Metamaterial-based absorbers have been extensively investigated in the terahertz (THz) range with ever increasing performances. In this paper, we propose an all-dielectric THz absorber based on doped silicon. The unit cell consists of a silicon cross resonator with an internal cross-shaped air cavity. Numerical results suggest that the proposed absorber can operate from THz to far-infrared regimes, having an average power absorption of ∼95% between 0.6 and 10 THz. Experimental results using THz time-domain spectroscopy show a good agreement with simulations. The underlying mechanisms for broadband absorption are attributed to the combined effects of multiple cavities modes formed by silicon resonators and bulk absorption in the doped silicon substrate, as confirmed by simulated field patterns and calculated diffraction efficiency. This ultra-wideband absorption is polarization insensitive and can operate across a wide range of the incident angle. The proposed absorber can be readily integrated into silicon-based photonic platforms and used for sensing, imaging, energy harvesting and wireless communications applications in the THz/IR range.
Databáze: Directory of Open Access Journals
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