Realization of vertical metal semiconductor heterostructures via solution phase epitaxy

Autor: Xiaoshan Wang, Zhiwei Wang, Jindong Zhang, Xiang Wang, Zhipeng Zhang, Jialiang Wang, Zhaohua Zhu, Zhuoyao Li, Yao Liu, Xuefeng Hu, Junwen Qiu, Guohua Hu, Bo Chen, Ning Wang, Qiyuan He, Junze Chen, Jiaxu Yan, Wei Zhang, Tawfique Hasan, Shaozhou Li, Hai Li, Hua Zhang, Qiang Wang, Xiao Huang, Wei Huang
Jazyk: angličtina
Rok vydání: 2018
Předmět:
Zdroj: Nature Communications, Vol 9, Iss 1, Pp 1-11 (2018)
Druh dokumentu: article
ISSN: 2041-1723
DOI: 10.1038/s41467-018-06053-z
Popis: Controlling the composition and crystal phase of layered heterostructures is important. Here, the authors report the liquid-phase epitaxial growth of Sn0.5W0.5S2 nanosheets with 83% metallic phase on SnS2 nanoplates, which are used as 100 ppb level chemiresistive gas sensors at room temperature.
Databáze: Directory of Open Access Journals