An Empirical Modeling of Gate Voltage-Dependent Behaviors of Amorphous Oxide Semiconductor Thin-Film Transistors including Consideration of Contact Resistance and Disorder Effects at Room Temperature

Autor:	Sungsik Lee
Jazyk:	angličtina
Rok vydání:	2021
Předmět:	amorphous oxide semiconductor thin-film transistor degree of disorder bias-dependent contact resistance compact transistor model empirical modeling Chemical technology TP1-1185 Chemical engineering TP155-156
Zdroj:	Membranes, Vol 11, Iss 12, p 954 (2021)
Druh dokumentu:	article
ISSN:	2077-0375
DOI:	10.3390/membranes11120954
Popis:	In this paper, we present an empirical modeling procedure to capture gate bias dependency of amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) while considering contact resistance and disorder effects at room temperature. From the measured transfer characteristics of a pair of TFTs where the channel layer is an amorphous In-Ga-Zn-O (IGZO) AOS, the gate voltage-dependent contact resistance is retrieved with a respective expression derived from the current–voltage relation, which follows a power law as a function of a gate voltage. This additionally allows the accurate extraction of intrinsic channel conductance, in which a disorder effect in the IGZO channel layer is embedded. From the intrinsic channel conductance, the characteristic energy of the band tail states, which represents the degree of channel disorder, can be deduced using the proposed modeling. Finally, the obtained results are also useful for development of an accurate compact TFT model, for which a gate bias-dependent contact resistance and disorder effects are essential.
Databáze:	Directory of Open Access Journals
Externí odkaz:	https://doaj.org/article/2d17f0ab5a0149b794d1f73bb42b91f5 Zobrazit plný text záznamu View record in DOAJ Plný text ve formátu PDF Plný text ve formátu HTML
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