Gate bias-dependent junction characteristics of silicon nanowires suspended between polysilicon electrodes
| Autor: | Yun-Hi Lee and Sungim Park |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2011 |
| Předmět: | |
| Zdroj: | Science and Technology of Advanced Materials, Vol 12, Iss 6, p 065004 (2011) |
| Druh dokumentu: | article |
| ISSN: | 1468-6996 1878-5514 |
| Popis: | Realistic integration of 1D materials into future nanodevices is limited by the lack of a manipulation process that allows a large number of nanowires to be arranged into an integrated circuit. In this work, we have grown Si nanowire bridges using a thin-film catalyst in a batch process at 200 °C and characterized the produced devices consisting of a p+-Si contact electrode, a suspended Si nanochannel, and a polysilicon contact electrode. Both the electrodes and connecting lines are made of Si-based materials by conventional low-pressure chemical vapor deposition. The results indicate that these devices can act as gate-controllable Schottky diodes in integrated nanocircuits. |
| Databáze: | Directory of Open Access Journals |
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