The Analysis of The Researches on Metal-Semiconductor Structures with and without Interfacial Layer in Turkey

Autor: Serhat Orkun Tan
Jazyk: angličtina
Rok vydání: 2019
Předmět:
Zdroj: Hittite Journal of Science and Engineering, Vol 6, Iss 1, Pp 51-56 (2019)
Druh dokumentu: article
ISSN: 2148-4171
DOI: 10.17350/HJSE19030000124
Popis: Today, there are fairly large number of theoretical and experimental studies on metalsemiconductor structures or Schottky structures which formed by a tight contact of the metal and semiconductor. Having different physical, chemical and electrical properties many materials have been used to produce metal-semiconductor structures with and without interface layer from past to present. The distinctive properties which are not exist at other diodes, open for improvement and widespread use of electronic technology has led scientists to make studies on the metal-semiconductor structures. Considering the scientific studies on metal-semiconductor structures, the examination of the metal-semiconductor and the metalsemiconductor with interfacial layer structures, the observation of its progress over time and the statistical analysis of academic studies in this area in Turkey have been made in this study. The analysis of the academic studies which are scanned in Web of Science database and made in Turkey were performed with data mining by using automated data collection methods and SQL Server Management Studio program. The statistical analysis results show that the academic studies made for every type of MS structure in Turkey increase for almost every year. Considering the academic studies conducted in 2018, the studies on MS and MPS have reached the highest level in all years with 118 and 13 publications. The last five years rate of the number of publications form nearly %45 of all-time publications and the academic studies made for every type of MS structure in Turkey increase for almost every year.
Databáze: Directory of Open Access Journals