Automotive 2.1 μm Full-Depth Deep Trench Isolation CMOS Image Sensor with a 120 dB Single-Exposure Dynamic Range

Autor: Dongsuk Yoo, Youngtae Jang, Youngchan Kim, Jihun Shin, Kangsun Lee, Seok-Yong Park, Seungho Shin, Hongsuk Lee, Seojoo Kim, Joongseok Park, Cheonho Park, Moosup Lim, Hyungjin Bae, Soeun Park, Minwook Jung, Sungkwan Kim, Shinyeol Choi, Sejun Kim, Jinkyeong Heo, Hojoon Lee, KyungChoon Lee, Youngkyun Jeong, Youngsun Oh, Min-Sun Keel, Bumsuk Kim, Haechang Lee, JungChak Ahn
Jazyk: angličtina
Rok vydání: 2023
Předmět:
Zdroj: Sensors, Vol 23, Iss 22, p 9150 (2023)
Druh dokumentu: article
ISSN: 1424-8220
DOI: 10.3390/s23229150
Popis: An automotive 2.1 μm CMOS image sensor has been developed with a full-depth deep trench isolation and an advanced readout circuit technology. To achieve a high dynamic range, we employ a sub-pixel structure featuring a high conversion gain of a large photodiode and a lateral overflow of a small photodiode connected to an in-pixel storage capacitor. With the sensitivity ratio of 10, the expanded dynamic range could reach 120 dB at 85 °C by realizing a low random noise of 0.83 e- and a high overflow capacity of 210 ke-. An over 25 dB signal-to-noise ratio is achieved during HDR image synthesis by increasing the full-well capacity of the small photodiode up to 10,000 e- and suppressing the floating diffusion leakage current at 105 °C.
Databáze: Directory of Open Access Journals
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