Autor: |
Zhixiang Hu, Licheng Zhou, Long Li, Binzhou Ying, Yunong Zhao, Peng Wang, Huayao Li, Yang Zhang, Huan Liu |
Jazyk: |
angličtina |
Rok vydání: |
2023 |
Předmět: |
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Zdroj: |
Chemosensors, Vol 11, Iss 4, p 252 (2023) |
Druh dokumentu: |
article |
ISSN: |
2227-9040 |
DOI: |
10.3390/chemosensors11040252 |
Popis: |
Colloidal quantum dots (CQDs) are gaining increasing attention for gas sensing applications due to their large surface area and abundant active sites. However, traditional resistor-type gas sensors using CQDs to realize molecule recognition and signal transduction at the same time are associated with the trade-off between sensitivity and conductivity. This limitation has restricted their range of practical applications. In this study, we propose and demonstrate a monolithically integrated field-effect transistor (FET) gas sensor. This novel FET-type gas sensor utilizes the capacitance coupling effect of the CQD sensing film based on a floating gate, and the quantum capacitance plays a role in the capacitance response of the CQD sensing film. By effectively separating the gate sensing film from the two-dimensional electron gas (2DEG) conduction channel, the lead sulfide (PbS) CQD gate-sensitized FET gas sensor offers high sensitivity, a high signal-to-noise ratio, and a wide range, with a real-time response of sub-ppb NO2. This work highlights the potential of quantum dot-sensitized FET gas sensors as a practical solution for integrated gas sensor chip applications using CQDs. |
Databáze: |
Directory of Open Access Journals |
Externí odkaz: |
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