| Autor: |
Rai Soumya, Shreya, Phogat Peeyush, Jha Ranjana, Singh Sukhvir |
| Jazyk: |
English<br />French |
| Rok vydání: |
2024 |
| Předmět: |
|
| Zdroj: |
MATEC Web of Conferences, Vol 393, p 01008 (2024) |
| Druh dokumentu: |
article |
| ISSN: |
2261-236X |
| DOI: |
10.1051/matecconf/202439301008 |
| Popis: |
Transition metal dichalcogenides show layered crystal structure with Van der Waals forces spanning the adjacent layers. Robust covalent bonds within each 2D sheet contribute to their outstanding electrical and optical properties. The incorporation of a chalcogen atom as a composite leads to enhanced optical and electrical characteristics of the TMDs, which could make them potential candidates for opto-electronic applications. In the present study, we have described the synthesis and characterizations of Se doped MoS2 nanolayers using a facile one-step hydrothermal method. XRD analysis revealed the diffraction peaks corresponding to MoS2 as well as Se which suggested the successful incorporation of selenium into MoS2 nanolayers. Optical analysis revealed an increased band gap of 1.01 eV after the addition of selenium, determined through UV-visible spectroscopy with a refractive index of 3.36. The morphological analysis by FESEM showed the formation of nanolayers and the EDX pattern showed the presence of Mo, S and Se. The enhanced bandgap of the as-synthesized material and the increased absorption in the UV region ensures its usage for the fabrication of efficient broadband photodetectors. Our future research focuses on the potential application of Se doped MoS2 nanolayers in the field of efficient photodetectors. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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