A Schottky diode and FET‐paralleled analogue predistorter for 5G small‐cell base stations

Autor:	Li Huang, Gaoming Xu, Jifu Huang, Taijun Liu
Jazyk:	angličtina
Rok vydání:	2021
Předmět:	Amplifiers Microwave circuits and devices Mobile radio systems Junction and barrier diodes Electrical engineering. Electronics. Nuclear engineering TK1-9971
Zdroj:	Electronics Letters, Vol 57, Iss 6, Pp 235-237 (2021)
Druh dokumentu:	article
ISSN:	1350-911X 0013-5194
DOI:	10.1049/ell2.12114
Popis:	Abstract This letter presents an analogue predistorter (APD) named Schottky diode (SD) and field effect transistor (FET)‐paralleled APD (SDFP‐APD) for the fifth‐generation (5G) mobile system, which is composed of an FET paralleled with two SDs. The simulation results show that the SDFP‐APD has the best compression compensation for the radio frequency power amplifier (RFPA) among the SD‐APD, the FET‐APD and the SDFP‐APD. Furthermore, the measurement results illustrate that the SDFP‐APD can improve the adjacent channel leakage ratio of the RFPA with the best linearisation performance among the three APDs and reduce the error vector magnitude while applying a 100‐MHz bandwidth 5G new radio signal. The proposed SDPF‐APD can be a promising linearisation technique for 5G small‐cell base stations.
Databáze:	Directory of Open Access Journals
Externí odkaz:	https://doaj.org/article/c2c36b70e3b84d3681ec1c113e35c7df Zobrazit plný text záznamu Plný text View record in DOAJ