Autor: |
Siya Lozanova, Ivan Kolev, Avgust Ivanov, Chavdar Roumenin |
Jazyk: |
angličtina |
Rok vydání: |
2018 |
Předmět: |
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Zdroj: |
Proceedings, Vol 2, Iss 13, p 711 (2018) |
Druh dokumentu: |
article |
ISSN: |
2504-3900 |
DOI: |
10.3390/proceedings2130711 |
Popis: |
A new 2D (two-dimensional) in-plane sensitive Hall-effect sensor comprising two identical n-Si Greek-crosses is presented. Each of the crosses contains one central square contact and, symmetrically to each of their four sides, an outer contact is available. Outer electrode from one configuration is connected with the respective opposite contact from the other configuration, thus forming four parallel three-contact (3C) Hall elements. These original connections provide pairs of opposite supply currents in each of the cross-Hall structure. Also the obligatory load resistors in the outer contacts of 3С Hall elements are replaced by internal resistances of crosses themselves. The samples have been implemented by IC technology, using four masks. The magnetic field is parallel to the structures’ plane. The couples of opposite contacts of each Greek-cross are the outputs for the two orthogonal components of the magnetic vector at sensitivities S ≈ 115 V/AT whereas the cross-talk is very promising, reaching no more than 2.4%. The mean lowest detected magnetic induction B at a supply current Is = 3 mA over the frequency range f ≤ 500 Hz at a signal to noise ratio equal to unity, is Bmin ≈ 14 μT. |
Databáze: |
Directory of Open Access Journals |
Externí odkaz: |
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