Autor: |
Xuehua Zhou, Yushu Chen, Qingxia Li, Shixing Yang, Chao Han |
Jazyk: |
angličtina |
Rok vydání: |
2024 |
Předmět: |
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Zdroj: |
Scientific Reports, Vol 14, Iss 1, Pp 1-7 (2024) |
Druh dokumentu: |
article |
ISSN: |
2045-2322 |
DOI: |
10.1038/s41598-024-67987-7 |
Popis: |
Abstract A precise quantification of energy gap for a molecular semiconductor is crucial. However, there has always been a lack of a suitable method which results in an inaccurate measurement. In this research, a three-terminal vertical structure (Al/AlO X /Au/ molecular semiconductor/Al), named hot electron transistor has been designed to be the most powerful method for energy gap determination. By analysing the IC-hot–VEB curves, the electron injected barrier and hole injected barrier can be extracted. In combination of the both, the energy gap of four objects, including PBDB-T-2Cl, C60, PTCDA, and Alq3, has been determined finally. |
Databáze: |
Directory of Open Access Journals |
Externí odkaz: |
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