A novel method for interfacial energy gap determination

Autor:	Xuehua Zhou, Yushu Chen, Qingxia Li, Shixing Yang, Chao Han
Jazyk:	angličtina
Rok vydání:	2024
Předmět:	Molecular semiconductor Energy gap Electron injection barrier Hole injection barrier Hot electron spectroscopy Medicine Science
Zdroj:	Scientific Reports, Vol 14, Iss 1, Pp 1-7 (2024)
Druh dokumentu:	article
ISSN:	2045-2322
DOI:	10.1038/s41598-024-67987-7
Popis:	Abstract A precise quantification of energy gap for a molecular semiconductor is crucial. However, there has always been a lack of a suitable method which results in an inaccurate measurement. In this research, a three-terminal vertical structure (Al/AlO X /Au/ molecular semiconductor/Al), named hot electron transistor has been designed to be the most powerful method for energy gap determination. By analysing the IC-hot–VEB curves, the electron injected barrier and hole injected barrier can be extracted. In combination of the both, the energy gap of four objects, including PBDB-T-2Cl, C60, PTCDA, and Alq3, has been determined finally.
Databáze:	Directory of Open Access Journals
Externí odkaz:	https://doaj.org/article/2bc9cad56007465eb24cc3706a593991 Zobrazit plný text záznamu View record in DOAJ Plný text ve formátu PDF Plný text ve formátu HTML
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