Effects of Asymmetric Local Joule Heating on Silicon Nanowire-Based Devices Formed by Dielectrophoresis Alignment Across Pt Electrodes

Autor: Hsiang-Hsi Ho, Chun-Lung Lin, Wei-Che Tsai, Liang-Zheng Hong, Cheng-Han Lyu, Hsun-Feng Hsu
Jazyk: angličtina
Rok vydání: 2018
Předmět:
Zdroj: Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-7 (2018)
Druh dokumentu: article
ISSN: 1931-7573
1556-276X
DOI: 10.1186/s11671-017-2423-z
Popis: Abstract We demonstrate the fabrication and characterization of silicon nanowire-based devices in metal-nanowire-metal configuration using direct current dielectrophoresis. The current-voltage characteristics of the devices were found rectifying, and their direction of rectification could be determined by voltage sweep direction due to the asymmetric Joule heating effect that occurred in the electrical measurement process. The photosensing properties of the rectifying devices were investigated. It reveals that when the rectifying device was in reverse-biased mode, the excellent photoresponse was achieved due to the strong built-in electric field at the junction interface. It is expected that rectifying silicon nanowire-based devices through this novel and facile method can be potentially applied to other applications such as logic gates and sensors.
Databáze: Directory of Open Access Journals
Externí odkaz: