Recent Advances of Solution-Processed Heterojunction Oxide Thin-Film Transistors
| Autor: | Yanwei Li, Chun Zhao, Deliang Zhu, Peijiang Cao, Shun Han, Youming Lu, Ming Fang, Wenjun Liu, Wangying Xu |
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| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: | |
| Zdroj: | Nanomaterials, Vol 10, Iss 5, p 965 (2020) |
| Druh dokumentu: | article |
| ISSN: | 10050965 2079-4991 |
| DOI: | 10.3390/nano10050965 |
| Popis: | Thin-film transistors (TFTs) made of metal oxide semiconductors are now increasingly used in flat-panel displays. Metal oxides are mainly fabricated via vacuum-based technologies, but solution approaches are of great interest due to the advantages of low-cost and high-throughput manufacturing. Unfortunately, solution-processed oxide TFTs suffer from relatively poor electrical performance, hindering further development. Recent studies suggest that this issue could be solved by introducing a novel heterojunction strategy. This article reviews the recent advances in solution-processed heterojunction oxide TFTs, with a specific focus on the latest developments over the past five years. Two of the most prominent advantages of heterostructure oxide TFTs are discussed, namely electrical-property modulation and mobility enhancement by forming 2D electron gas. It is expected that this review will manifest the strong potential of solution-based heterojunction oxide TFTs towards high performance and large-scale electronics. |
| Databáze: | Directory of Open Access Journals |
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