| Autor: |
W. Lu, C. Y. Wei, K. Jiang, J. Q. Liu, J. X. Lu, P. Han, A. D. Li, Y. D. Xia, B. Xu, J. Yin, Z. G. Liu |
| Jazyk: |
angličtina |
| Rok vydání: |
2015 |
| Předmět: |
|
| Zdroj: |
AIP Advances, Vol 5, Iss 8, Pp 087158-087158-8 (2015) |
| Druh dokumentu: |
article |
| ISSN: |
2158-3226 |
| DOI: |
10.1063/1.4929521 |
| Popis: |
The charge-trapping memory (CTM) structures Pt/Al2O3/TaAlO/Al2O3/p-Si and Pt/Al2O3/ZrAlO/Al2O3/p-Si were fabricated by using rf-sputtering and atomic layer deposition techniques, in which the potentials at the bottom of the conduction band (PBCB) of high-k composites TaAlO and ZrAlO were specially designed. With a lower PBCB difference between TaAlO and p-Si than that between ZrAlO and p-Si, TaAlO CTM device shows a better charge-trapping performance. A density of trapped charges 2.88 × 1013/cm2 at an applied voltage of ±7 V was obtained for TaAlO CTM device, and it could keep about 60% of initially trapped charges after 10 years. It was suggested that the PBCB difference between high-k composite and p-Si dominates their charge-trapping behaviors. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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