| Autor: |
Jianming Lei, Rui Wang, Guo Yang, Jin Wang, Fulong Jiang, Dunjun Chen, Hai Lu, Rong Zhang, Youdou Zheng |
| Jazyk: |
angličtina |
| Rok vydání: |
2019 |
| Předmět: |
|
| Zdroj: |
IEEE Journal of the Electron Devices Society, Vol 7, Pp 690-695 (2019) |
| Druh dokumentu: |
article |
| ISSN: |
2168-6734 |
| DOI: |
10.1109/JEDS.2019.2927608 |
| Popis: |
A double-diode-isolation method with low parasitic capacitance devices and reverse clamping is proposed to accurately extract the high-frequency and high-voltage dynamic on-resistance ( $R_{\mathrm{ dson}}$ ) of AlGaN/GaN high electron mobility transistor (HEMT) power devices. The response time required for the drain voltage to drop back to the on-voltage of this testing circuit can reach 100 ns, and the forward voltage drop of the isolation diode is monitored in real time using low-voltage probes. A low value constant current source is built to power the testing circuit at only several mA to avoid additional self-heating effect. With these improvements, we can obtain a test frequency of more than 1 MHz, a test voltage of more than 600 V and an accuracy of higher than 97.8% for the extraction of dynamic $\text{R}_{\mathrm{ dson}}$ . |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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