| Autor: |
Fengdeng Liu, Tristan K. Truttmann, Dooyong Lee, Bethany E. Matthews, Iflah Laraib, Anderson Janotti, Steven R. Spurgeon, Scott A. Chambers, Bharat Jalan |
| Jazyk: |
angličtina |
| Rok vydání: |
2022 |
| Předmět: |
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| Zdroj: |
Communications Materials, Vol 3, Iss 1, Pp 1-8 (2022) |
| Druh dokumentu: |
article |
| ISSN: |
2662-4443 |
| DOI: |
10.1038/s43246-022-00290-y |
| Popis: |
Germanium-based oxides are wide bandgap semiconductors with the prospects of ambipolar doping. Here, a hybrid molecular beam epitaxy is demonstrated for the growth of both rutile Sn1-x Ge x O2 and perovskite SrSn1-x Ge x O3 films. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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