New materials based on InP-ZnS system for semiconductor gas analyzers
| Autor: | I. A. Kirovskaya, R. V. Ekkert, A. O. Ekkert, E. V. Mironova, I. Yu. Umansky, A. I. Blesman, D. A. Polonyankin, L. V. Kolesnikov, E. N. Kopylova, V. B. Goncharov |
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| Jazyk: | English<br />Russian |
| Rok vydání: | 2019 |
| Předmět: | |
| Zdroj: | Омский научный вестник, Vol 2 (164), Pp 56-61 (2019) |
| Druh dokumentu: | article |
| ISSN: | 1813-8225 2541-7541 |
| DOI: | 10.25206/1813-8225-2019-164-56-61 |
| Popis: | According to the developed methodology, based on the isothermal diffusion of the initial binary compounds (InP, ZnS), their physical and physicochemical properties, solid solutions of different composition ((InP)x (ZnS)1-x) have been obtained. X-ray examinations have been conducted which allows to certify them as substitution solid solution with sphalerite structure and acid-base properties studies (pH isoelectric state — pHISO). The consistent patterns of changes in the composition of the studied (bulk and surface) properties, which are of predominantly smooth nature, have been established. A correlation between theoretical calculated crystal density and acid sites strength (pHISO) has been found which served as the basis for recommending a less labour-consuming way to search for the advanced materials for semiconductor gas analyzers. |
| Databáze: | Directory of Open Access Journals |
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