| Autor: |
Hyun‐Joong Kim, Kyoung‐Woong Moon, Seongsoo Yoon, Kyongmo An, Changsoo Kim, Seungmo Yang, Tae‐Seong Ju, Jong Wan Son, Jung‐Il Hong, Chanyong Hwang |
| Jazyk: |
angličtina |
| Rok vydání: |
2024 |
| Předmět: |
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| Zdroj: |
Advanced Electronic Materials, Vol 10, Iss 9, Pp n/a-n/a (2024) |
| Druh dokumentu: |
article |
| ISSN: |
2199-160X |
| DOI: |
10.1002/aelm.202400027 |
| Popis: |
Abstract To overcome memory bottleneck issues in memory‐centric chip technologies, in‐memory computing has been considered an alternative route involving simultaneous data storage and computing in a memory network. In the context of spintronics, a memory‐in‐logic device based on spin‐transfer‐torque or spin‐orbit‐torque magnetoresistive random‐access memory, and a magnetic domain wall (DW) racetrack has been studied. To expand the functionalities of a conventional magnetic DW racetrack, the study devises a reprogrammable exchange‐biased DW racetrack with local engineering of the exchange bias field (HE) in continuous magnetic films without requiring a lithography process for specific patterning of the films. Furthermore, current‐driven and field‐driven DW motion along the exchange‐biased racetrack is demonstrated. Additionally, within the route of the locally different exchange‐biased racetrack, a gate function can be performed to guide or stop DW motion by locally tuning HE. The complex maze racetrack is rewritable, and multiple input channels can be controlled. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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