Reversible displacive transformation in MnTe polymorphic semiconductor

Autor: Shunsuke Mori, Shogo Hatayama, Yi Shuang, Daisuke Ando, Yuji Sutou
Jazyk: angličtina
Rok vydání: 2020
Předmět:
Zdroj: Nature Communications, Vol 11, Iss 1, Pp 1-8 (2020)
Druh dokumentu: article
ISSN: 2041-1723
DOI: 10.1038/s41467-019-13747-5
Popis: Designing low power consumption and fast operation electronic phase-change devices remains a challenge. Here, the authors demonstrate the reversible displacive transformation in polycrystalline MnTe films to enable resistive switching via fast Joule heating for fast nonvolatile memory applications.
Databáze: Directory of Open Access Journals