| Autor: |
William Fraser, Daniel Benedikovic, Radovan Korcek, Maziyar Milanizadeh, Dan-Xia Xu, Jens H. Schmid, Pavel Cheben, Winnie N. Ye |
| Jazyk: |
angličtina |
| Rok vydání: |
2024 |
| Předmět: |
|
| Zdroj: |
Scientific Reports, Vol 14, Iss 1, Pp 1-9 (2024) |
| Druh dokumentu: |
article |
| ISSN: |
2045-2322 |
| DOI: |
10.1038/s41598-024-62336-0 |
| Popis: |
Abstract Efficient fiber-chip coupling interfaces are critically important for integrated photonics. Since surface gratings diffract optical signals vertically out of the chip, these couplers can be placed anywhere in the circuit allowing for wafer-scale testing. While state-of-the-art grating couplers have been developed for silicon-on-insulator (SOI) waveguides, the moderate index contrast of silicon nitride (SiN) presents an outstanding challenge for implementing efficient surface grating couplers on this platform. Due to the reduced grating strength, a longer structure is required to radiate the light from the chip which produces a diffracted field that is too wide to couple into the fiber. In this work, we present a novel grating coupler architecture for silicon nitride photonic integrated circuits that utilizes an amorphous silicon (α-Si) overlay. The high refractive index of the α-Si overlay breaks the coupler’s vertical symmetry which increases the directionality. We implement subwavelength metamaterial apodization to optimize the overlap of the diffracted field with the optical fiber Gaussian mode profile. Furthermore, the phase of the diffracted beam is engineered to focalize the field into an SMF-28 optical fiber placed 55 µm above the surface of the chip. The coupler was designed using rigorous three-dimensional (3D) finite-difference time-domain (FDTD) simulations supported by genetic algorithm optimization. Our grating coupler has a footprint of 26.8 × 32.7 µm2 and operates in the O-band centered at 1.31 μm. It achieves a high directionality of 85% and a field overlap of 90% with a target fiber mode size of 9.2 µm at the focal plane. Our simulations predict a peak coupling efficiency of − 1.3 dB with a 1-dB bandwidth of 31 nm. The α-Si/SiN grating architecture presented in this work enables the development of compact and efficient optical interfaces for SiN integrated photonics circuits with applications including optical communications, sensing, and quantum photonics. |
| Databáze: |
Directory of Open Access Journals |
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