| Autor: |
Steponas Ašmontas, Maksimas Anbinderis, Jonas Gradauskas, Remigijus Juškėnas, Konstantinas Leinartas, Andžej Lučun, Algirdas Selskis, Laurynas Staišiūnas, Sandra Stanionytė, Algirdas Sužiedėlis, Aldis Šilėnas, Edmundas Širmulis |
| Jazyk: |
angličtina |
| Rok vydání: |
2020 |
| Předmět: |
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| Zdroj: |
Materials, Vol 13, Iss 12, p 2857 (2020) |
| Druh dokumentu: |
article |
| ISSN: |
1996-1944 |
| DOI: |
10.3390/ma13122857 |
| Popis: |
Niobium-doped titanium dioxide (Ti1−xNbxO2) films were grown on p-type Si substrates at low temperature (170 °C) using an atomic layer deposition technique. The as-deposited films were amorphous and showed low electrical conductivity. The films became electrically well-conducting and crystallized into the an anatase structure upon reductive post-deposition annealing at 600 °C in an H2 atmosphere for 30 min. It was shown that the Ti0.72Nb0.28O2/p+-Si heterojunction fabricated on low resistivity silicon (10−3 Ω cm) had linear current–voltage characteristic with a specific contact resistivity as low as 23 mΩ·cm2. As the resistance dependence on temperature revealed, the current across the Ti0.72Nb0.28O2/p+-Si heterojunction was mainly determined by the band-to-band charge carrier tunneling through the junction. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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