Novel 1064 nm DBR lasers combining active layer removal and surface gratings

Autor:	O. Brox, H. Wenzel, J. Fricke, P. Della Casa, A. Maaßdorf, M. Matalla, S. Wenzel, A. Wicht, A. Knigge
Jazyk:	angličtina
Rok vydání:	2021
Předmět:	Lasing action in semiconductors Design of specific laser systems Laser beam characteristics and interactions Gratings echelles Laser beam interactions and properties Semiconductor lasers Electrical engineering. Electronics. Nuclear engineering TK1-9971
Zdroj:	Electronics Letters, Vol 57, Iss 14, Pp 559-561 (2021)
Druh dokumentu:	article
ISSN:	1350-911X 0013-5194
DOI:	10.1049/ell2.12192
Popis:	Abstract The fabrication and characterisation details of novel distributed Bragg reflector (DBR) diode lasers emitting around 1064 nm are presented here. The AlGaAs epitaxial layer stack used here allows the removal of the active quantum wells in passive sections where no current is injected. The DBR lasers fabricated with a two‐step epitaxial approach without an active layer in the grating sections show improved performance in terms of power, efficiency, and linewidth in comparison to its all‐active DBR counterparts.
Databáze:	Directory of Open Access Journals
Externí odkaz:	https://doaj.org/article/2a150269cf8f4726b8c4e713b999d296 Zobrazit plný text záznamu Plný text View record in DOAJ