| Autor: |
Shodruz T. Umedov, Anastasia V. Grigorieva, Alexey V. Sobolev, Alexander V. Knotko, Leonid S. Lepnev, Efim A. Kolesnikov, Dmitri O. Charkin, Andrei V. Shevelkov |
| Jazyk: |
angličtina |
| Rok vydání: |
2023 |
| Předmět: |
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| Zdroj: |
Nanomaterials, Vol 13, Iss 3, p 427 (2023) |
| Druh dokumentu: |
article |
| ISSN: |
2079-4991 |
| DOI: |
10.3390/nano13030427 |
| Popis: |
Metal gallium as a low-melting solid was applied in a mixture with elemental iodine to substitute tin(IV) in a promising light-harvesting phase of Cs2SnI6 by a reactive sintering method. The reducing power of gallium was applied to influence the optoelectronic properties of the Cs2SnI6 phase via partial reduction of tin(IV) and, very likely, substitute partially Sn4+ by Ga3+. The reduction of Sn4+ to Sn2+ in the Cs2SnI6 phase contributes to the switching from p-type conductivity to n-type, thereby improving the total concentration and mobility of negative-charge carriers. The phase composition of the samples obtained was studied by X-ray diffraction (XRD) and 119Sn Mössbauer spectroscopy (MS). It is shown that the excess of metal gallium in a reaction melt leads to the two-phase product containing Cs2SnI6 with Sn4+ and β-CsSnI3 with Sn2+. UV–visible absorption spectroscopy shows a high absorption coefficient of the composite material. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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