Dual Functions of V/SiO x /AlO y /p++Si Device as Selector and Memory

Autor: Sungjun Kim, Chih-Yang Lin, Min-Hwi Kim, Tae-Hyeon Kim, Hyungjin Kim, Ying-Chen Chen, Yao-Feng Chang, Byung-Gook Park
Jazyk: angličtina
Rok vydání: 2018
Předmět:
Zdroj: Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-7 (2018)
Druh dokumentu: article
ISSN: 1931-7573
1556-276X
DOI: 10.1186/s11671-018-2660-9
Popis: Abstract This letter presents dual functions including selector and memory switching in a V/SiO x /AlO y /p++Si resistive memory device by simply controlling compliance current limit (CCL). Unidirectional threshold switching is observed after a positive forming with low CCL of 1 μA. The shifts to the V-electrode side of the oxygen form the VO x layer, where the threshold switching can be explained by the metal-insulation-transition phenomenon. For higher CCL (30 μA) applied to the device, a bipolar memory switching is obtained, which is attributed to formation and rupture of the conducting filament in SiO y layer. 1.5-nm-thick AlO y layer with high thermal conductivity plays an important role in lowering the off-current for memory and threshold switching. Through the temperature dependence, high-energy barrier (0.463 eV) in the LRS is confirmed, which can cause nonlinearity in a low-resistance state. The smaller the CCL, the higher the nonlinearity, which provides a larger array size in the cross-point array. The coexistence of memory and threshold switching in accordance with the CCL provides the flexibility to control the device for its intended use.
Databáze: Directory of Open Access Journals
Externí odkaz: