| Autor: |
Md. Hasan Raza Ansari, Nazek El-Atab |
| Jazyk: |
angličtina |
| Rok vydání: |
2024 |
| Předmět: |
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| Zdroj: |
IEEE Access, Vol 12, Pp 128810-128815 (2024) |
| Druh dokumentu: |
article |
| ISSN: |
2169-3536 |
| DOI: |
10.1109/ACCESS.2024.3456477 |
| Popis: |
This work showcases the implementation of 16 Boolean logic functions through a double-gate (DG) fully depleted (FD) Silicon-on-Insulator (SOI) Metal-Oxide-Semiconductor-Field-Effect-Transistor (MOSFET). The DG-FD-SOI device with an independent gate operation highlights that Boolean logic functions can be implemented in two steps (Program and Read), and Boolean logic output “High” (“1”) and “Low” (“0”) depends on the floating body effect. The Program (Step 1) operation is based on band-to-band tunneling and forward bias mechanisms, while the Read (Step 2) operation is based on drift and impact ionization mechanism. The program and read operations for logic-in-memory computing are performed in ~10 ns and consume low energy ( $\sim 4.04\times 10 ^{-14}$ J) during the read operation. The results also show that the device with optimized device dimensions, biasing, and timing scheme achieves a drain current ratio of $\sim 10^{5}$ . These results reveal that DG-FD-SOI-based MOSFET for logic-in-memory computing is a compelling alternative to the limitations of von Neumann architectures, offering significant speed and energy efficiency advantages. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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