| Autor: |
H. Mehdi, M. Martin, S. David, J. M. Hartmann, J. Moeyaert, M. L. Touraton, C. Jany, L. Virot, J. Da Fonseca, J. Coignus, D. Blachier, T. Baron |
| Jazyk: |
angličtina |
| Rok vydání: |
2020 |
| Předmět: |
|
| Zdroj: |
AIP Advances, Vol 10, Iss 12, Pp 125204-125204-6 (2020) |
| Druh dokumentu: |
article |
| ISSN: |
2158-3226 |
| DOI: |
10.1063/5.0030677 |
| Popis: |
Vertical GaAs p–i–n photodetectors epitaxially grown on GaAs(001), Ge/Si(001), and Si(001) substrates are reported. The performances of such photodetectors were investigated as a function of threading dislocation density in the stacks. A low dark current at room temperature, below 100 pA up to −9 V for all photodetectors, was evidenced. The absorption coefficients of GaAs were extracted from the spectral response of those p–i–n structures between 400 nm and 1100 nm. A responsivity of 0.17 A/W at 850 nm was obtained for a GaAs p–i–n structure grown directly on Si as compared to the value of 0.23 A/W obtained for the GaAs substrate. Such responsivity shows that III–V integration on Si is an efficient way of fabricating high performance optical sensors with low cost large scale productivity. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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