| Autor: |
Lu Liu, Wanyu Li, Fei Li, Jingping Xu |
| Jazyk: |
angličtina |
| Rok vydání: |
2023 |
| Předmět: |
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| Zdroj: |
Nanomaterials, Vol 13, Iss 19, p 2673 (2023) |
| Druh dokumentu: |
article |
| ISSN: |
2079-4991 |
| DOI: |
10.3390/nano13192673 |
| Popis: |
In this work, a dual interfacial passivation layer (IPL) consisting of TaON/GeON is implemented in GaAs metal-oxide-semiconductor (MOS) capacitors with ZrTaON as a high-k layer to obtain superior interfacial and electrical properties. As compared to the samples with only GeON IPL or no IPL, the sample with the dual IPL of TaON/GeON exhibits the best performance: low interface-state density (1.31 × 1012 cm−2 eV−1), small gate leakage current density (1.62 × 10−5 A cm−2 at Vfb + 1 V) and large equivalent dielectric constant (18.0). These exceptional results can be attributed to the effective blocking action of the TaON/GeON dual IPL. It efficiently prevents the out-diffusion of Ga/As atoms and the in-diffusion of oxygen, thereby safeguarding the gate stack against degradation. Additionally, the insertion of the thin TaON layer successfully hinders the interdiffusion of Zr/Ge atoms, thus averting any reaction between Zr and Ge. Consequently, the occurrence of defects in the gate stack and at/near the GaAs surface is significantly reduced. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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