Applying shallow nitrogen implantation from rf plasma for dual gate oxide technology

Autor:	Tomasz Bieniek, Romuald B. Beck, Andrzej Jakubowski, Grzegorz Głuszko, Piotr Konarski, Michał Ćwil
Jazyk:	angličtina
Rok vydání:	2023
Předmět:	CMOS dual gate oxide gate stack oxynitride plasma implantation Telecommunication TK5101-6720 Information technology T58.5-58.64
Zdroj:	Journal of Telecommunications and Information Technology, Iss 3 (2023)
Druh dokumentu:	article
ISSN:	1509-4553 1899-8852
DOI:	10.26636/jtit.2007.3.819
Popis:	The goal of this work was to study nitrogen implantation from plasma with the aim of applying it in dual gate oxide technology and to examine the influence of the rf power of plasma and that of oxidation type. The obtained structures were examined by means of ellipsometry, SIMS and electrical characterization methods.
Databáze:	Directory of Open Access Journals
Externí odkaz:	https://doaj.org/article/2848ffbfd9ec43f4ae7e5115d8f77103 Zobrazit plný text záznamu View record in DOAJ