Breakdown Characteristics of GaN DMISFETs Fabricated via Mg, Si and N Triple Ion Implantation
| Autor: | Tohru Nakamura, Michitaka Yoshino, Toru Toyabe, Akira Yasuda |
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| Jazyk: | angličtina |
| Rok vydání: | 2024 |
| Předmět: | |
| Zdroj: | Micromachines, Vol 15, Iss 1, p 147 (2024) |
| Druh dokumentu: | article |
| ISSN: | 15010147 2072-666X |
| DOI: | 10.3390/mi15010147 |
| Popis: | Mg-ion-implanted layers in a GaN substrate after annealing were investigated. Implanted Mg atoms precipitated along the edges of crystal defects were observed using 3D-APT. The breakdown characteristics of a GaN double-diffused vertical MISFET (DMISFET) fabricated via triple ion implantation are presented. A DMISFET with Si-ion-implanted source regions was formed in Mg-ion-implanted p-base regions, which were isolated from adjacent devices by N-ion-implanted edge termination regions. A threshold voltage of −0.5 V was obtained at a drain voltage of 0.5 V for the fabricated vertical MISFET with an estimated Mg surface concentration of 5 × 1018 cm−3. The maximum drain current and maximum transconductance in a saturation region of Vds = 100 V were 2.8 mA/mm and 0.5 mS/mm at a gate voltage of 15 V, respectively. The breakdown voltage in the off-state was 417 V. The breakdown points were determined by the boundary regions between the N- and Mg-implanted regions. By improving heat annealing methods, ion-implanted GaN DMISFETs can be a promising candidate for future high-voltage and high-power applications. |
| Databáze: | Directory of Open Access Journals |
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