| Autor: |
Hsin-Chia Yang, Sung-Ching Chi, Han-Ya Yang, Yu-Tzu Yang |
| Jazyk: |
angličtina |
| Rok vydání: |
2024 |
| Předmět: |
|
| Zdroj: |
Applied Sciences, Vol 14, Iss 20, p 9371 (2024) |
| Druh dokumentu: |
article |
| ISSN: |
2076-3417 |
| DOI: |
10.3390/app14209371 |
| Popis: |
FinFET transistors with fin channel lengths of 160 nm and 2000 nm and a planar MOSFET transistor with channel lengths of 180 nm and 90 nm are presented with characteristic curves at various Gate biases. A finalized algorithm with kink effects was effectively responsible for addressing the field effect transistors. The algorithm included the modified conventional current–voltage formula and a nonlinear heat-associated kink solution which was simplified as a Gaussian form. Three parameters in the modified model included kN (which was related with channel width, channel length, and gate oxide capacitor, and was proportional to the mobility of carriers), Vth (threshold voltage), and λ (the inverse of early voltage). Those parameters were determined to minimize the discrepancies between the measured data and the fitting values, but left kinks located at around (VGS-Vth), which were deliberately eliminated by the Gaussian form because of the agitation of thermal kink effects. The whole fitting was made to be as close as possible to the as-measured IDS-VDS. In the meantime, those determined parameters were physically meaningful after the analysis had been performed. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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