Analysis of Kinetic Properties and Tunnel-Coupled States in Asymmetrical Multilayer Semiconductor Structures
| Autor: | Rustam Y. Rasulov, Vokhob R. Rasulov, Kamolakhon K. Urinova, Islombek A. Muminov, Bakhodir B. Akhmedov |
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| Jazyk: | English<br />Russian<br />Ukrainian |
| Rok vydání: | 2024 |
| Předmět: | |
| Zdroj: | East European Journal of Physics, Iss 2, Pp 270-273 (2024) |
| Druh dokumentu: | article |
| ISSN: | 2312-4334 2312-4539 |
| DOI: | 10.26565/2312-4334-2024-2-27 |
| Popis: | This study investigates the kinetic properties of both symmetrical and asymmetrical multilayer and nano-sized semiconductor structures. We develop a theoretical framework using various models and mathematical methods to solve the Schrödinger matrix equation for a system of electrons, taking into account the Bastard condition, which considers the difference in the effective masses of current carriers in adjacent layers. We analyze tunnel-coupled electronic states in quantum wells separated by a narrow tunnel-transparent potential barrier. Our findings provide insights into the electronic properties of semiconductor structures, which are crucial for applications in micro- or nanoelectronics and other areas of solid-state physics. |
| Databáze: | Directory of Open Access Journals |
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