| Autor: |
Xiaobing Tang, Zhaojin Wang, Dan Wu, Zhenghui Wu, Zhenwei Ren, Ruxue Li, Pai Liu, Guanding Mei, Jiayun Sun, Jiahao Yu, Fankai Zheng, Wallace C. H. Choy, Rui Chen, Xiao Wei Sun, Fuqian Yang, Kai Wang |
| Jazyk: |
angličtina |
| Rok vydání: |
2022 |
| Předmět: |
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| Zdroj: |
Advanced Science, Vol 9, Iss 13, Pp n/a-n/a (2022) |
| Druh dokumentu: |
article |
| ISSN: |
2198-3844 |
| DOI: |
10.1002/advs.202104788 |
| Popis: |
Abstract The development of in situ growth methods for the fabrication of high‐quality perovskite single‐crystal thin films (SCTFs) directly on hole‐transport layers (HTLs) to boost the performance of optoelectronic devices is critically important. However, the fabrication of large‐area high‐quality SCTFs with thin thickness still remains a significant challenge due to the elusive growth mechanism of this process. In this work, the influence of three key factors on in situ growth of high‐quality large‐size MAPbBr3 SCTFs on HTLs is investigated. An optimal “sweet spot” is determined: low interface energy between the precursor solution and substrate, a slow heating rate, and a moderate precursor solution concentration. As a result, the as‐obtained perovskite SCTFs with a thickness of 540 nm achieve a record area to thickness ratio of 1.94 × 104 mm, a record X‐ray diffraction peak full width at half maximum of 0.017°, and an ultralong carrier lifetime of 1552 ns. These characteristics enable the as‐obtained perovskite SCTFs to exhibit a record carrier mobility of 141 cm2 V−1 s−1 and good long‐term structural stability over 360 days. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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