| Autor: |
Ya-Hsiang Tai, Yi-Cheng Yuan, Cheng-Che Tu, Pin-Chun Wang |
| Jazyk: |
angličtina |
| Rok vydání: |
2022 |
| Předmět: |
|
| Zdroj: |
IEEE Journal of the Electron Devices Society, Vol 10, Pp 309-312 (2022) |
| Druh dokumentu: |
article |
| ISSN: |
2168-6734 |
| DOI: |
10.1109/JEDS.2022.3164082 |
| Popis: |
Gap-type amorphous silicon (a-Si) thin-film transistor (TFT) used as photo sensor has been reported in previous literature. However, the noise behavior of gap-type a-Si TFT is not inspected yet. Therefore, we investigate the noise response of the gap-type a-Si TFT under illumination in this paper. We compare the difference between the results of the gap-type and the conventional-type TFTs. In addition, we analyze it including the perspectives of power spectrum, integral power spectrum, Hooge parameter, fluctuate slope. Finally, we explain the reason for its fluctuate slope transition and review the correlation between noise behavior and photo effect mechanism. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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