Potential of NiOx/Nickel Silicide/n+ Poly-Si Contact for Perovskite/TOPCon Tandem Solar Cells

Autor: Jiryang Kim, Dowon Pyun, Dongjin Choi, Seok-Hyun Jeong, Changhyun Lee, Jiyeon Hyun, Ha Eun Lee, Sang-Won Lee, Hoyoung Song, Solhee Lee, Donghwan Kim, Yoonmook Kang, Hae-Seok Lee
Jazyk: angličtina
Rok vydání: 2022
Předmět:
Zdroj: Energies, Vol 15, Iss 3, p 870 (2022)
Druh dokumentu: article
ISSN: 1996-1073
DOI: 10.3390/en15030870
Popis: In this work, nickel silicide was applied to tandem solar cells as an interlayer. By the process of thermal evaporation, a layer of NiOx, hole transport layer (HTL) was deposited on n+ poly-Si layer directly. Nickel silicide was simultaneously formed by nickel diffusion from NiOx to n+ poly-Si layer during the deposition and annealing process. The I–V characteristics of NiOx/n+ poly-Si contact with nickel silicide showed ohmic contact and low contact resistivity. This structure is expected to be more advantageous for electrical connection between perovskite top cell and TOPCon bottom cell compared to the NiOx/TCO/n+ poly-Si structure showing Schottky contact. Furthermore, nickel silicide and Ni-deficient NiOx thin film formed by diffusion of nickel can improve the fill factor of the two sub cells. These results imply the potential of a NiOx/nickel silicide/n+ poly-Si structure as a perovskite/silicon tandem solar cell interlayer.
Databáze: Directory of Open Access Journals
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