| Autor: |
Ying Chang, Aixia Xiao, Rubing Li, Miaojing Wang, Saisai He, Mingyuan Sun, Lizhong Wang, Chuanyong Qu, Wei Qiu |
| Jazyk: |
angličtina |
| Rok vydání: |
2021 |
| Předmět: |
|
| Zdroj: |
Crystals, Vol 11, Iss 6, p 626 (2021) |
| Druh dokumentu: |
article |
| ISSN: |
2073-4352 |
| DOI: |
10.3390/cryst11060626 |
| Popis: |
Raman spectroscopy is an indispensable method for the nondestructive testing of semiconductor materials and their microstructures. This paper presents a study on the angle-resolved intensity of polarized micro-Raman spectroscopy for a 4H silicon carbide (4H-SiC) wafer. A generalized theoretical model of polarized Raman intensity was established by considering the birefringence effect. The distributions of angle-resolved Raman intensities were achieved under normal and oblique backscattering configurations. Experiments were performed on a self-built angle-resolved Raman system, which verified the validity of the proposed model and achieved the identification of crystal orientations of the 4H-SiC sample. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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