Nano-Floating Gate Memory Devices Composed of ZnO Thin-Film Transistors on Flexible Plastics

Autor:	Park Byoungjun, Cho Kyoungah, Kim Sungsu, Kim Sangsig
Jazyk:	angličtina
Rok vydání:	2011
Předmět:	Nanoparticles Thin-film transistors Low temperature Non-volatile memory Flexible devices Materials of engineering and construction. Mechanics of materials TA401-492
Zdroj:	Nanoscale Research Letters, Vol 6, Iss 1, p 41 (2011)
Druh dokumentu:	article
ISSN:	1931-7573 1556-276X
Popis:	Abstract Nano-floating gate memory devices were fabricated on a flexible plastic substrate by a low-temperature fabrication process. The memory characteristics of ZnO-based thin-film transistors with Al nanoparticles embedded in the gate oxides were investigated in this study. Their electron mobility was found to be 0.18 cm2/V·s and their on/off ratio was in the range of 104–105. The threshold voltages of the programmed and erased states were negligibly changed up to 103 cycles. The flexibility, memory properties, and low-temperature fabrication of the nano-floating gate memory devices described herein suggest that they have potential applications for future flexible integrated electronics.
Databáze:	Directory of Open Access Journals
Externí odkaz:	https://doaj.org/article/26881efa41884945accce78d7822ed3b Zobrazit plný text záznamu Full text from SpringerLink View record in DOAJ