| Autor: |
Wei Wu, Yongqian Gu, Mingkang Yu, Chongbing Gao, Yong Chen |
| Jazyk: |
angličtina |
| Rok vydání: |
2023 |
| Předmět: |
|
| Zdroj: |
Micromachines, Vol 14, Iss 4, p 836 (2023) |
| Druh dokumentu: |
article |
| ISSN: |
2072-666X |
| DOI: |
10.3390/mi14040836 |
| Popis: |
Nowadays, the performance of silicon-based devices is almost approaching the physical limit of their materials, which have difficulty meeting the needs of modern high-power applications. The SiC MOSFET, as one of the important third-generation wide bandgap power semiconductor devices, has received extensive attention. However, numerous specific reliability issues exist for SiC MOSFETs, such as bias temperature instability, threshold voltage drift, and reduced short-circuit robustness. The remaining useful life (RUL) prediction of SiC MOSFETs has become the focus of device reliability research. In this paper, a RUL estimation method using the Extended Kalman Particle Filter (EPF) based on an on-state voltage degradation model for SiC MOSFETs is proposed. A new power cycling test platform is designed to monitor the on-state voltage of SiC MOSFETs used as the failure precursor. The experimental results show that the RUL prediction error decreases from 20.5% of the traditional Particle Filter algorithm (PF) algorithm to 11.5% of EPF with 40% data input. The life prediction accuracy is therefore improved by about 10%. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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