Magnetic properties and spin-orbit-torque-induced magnetization switching in Ta/MnGa grown on Cr and NiAl buffer layers
| Autor: | Michihiko Yamanouchi, Nguyen Viet Bao, Fumiaki Shimohashi, Kohey Jono, Masaki Inoue, Tetsuya Uemura |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: | |
| Zdroj: | AIP Advances, Vol 9, Iss 12, Pp 125245-125245-4 (2019) |
| Druh dokumentu: | article |
| ISSN: | 2158-3226 83480382 |
| DOI: | 10.1063/1.5129300 |
| Popis: | We investigate the magnetic properties and spin-orbit-torque-induced (SOT-induced) magnetization switching in Ta/MnGa/Cr and Ta/MnGa/NiAl structures. Out-of-plane hysteresis loops for the Ta/MnGa/Cr (NiAl) structures are skewed (square). In-plane currents I are applied to Hall devices made of structures exposed to in-plane magnetic fields Hin along the channel direction. Clear asymmetric magnetization switching with respect to the polarity of I and Hin is detected for the Ta/MnGa/NiAl device. Similar asymmetric magnetization switching is observed for the Ta/MnGa/Cr device, although the magnetization is partially switched regardless of the polarity of I and Hin. These results suggest that an in-plane magnetization component opposite to Hin is present in the Cr-buffer structure and that the formation of such a component is suppressed in the NiAl-buffer structure. |
| Databáze: | Directory of Open Access Journals |
| Externí odkaz: |
|