The role of a tantalum interlayer in enhancing the properties of Fe3O4 thin films
| Autor: | Hai Dang Ngo, Vo Doan Thanh Truong, Van Qui Le, Hoai Phuong Pham, Thi Kim Hang Pham |
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| Jazyk: | angličtina |
| Rok vydání: | 2024 |
| Předmět: | |
| Zdroj: | Beilstein Journal of Nanotechnology, Vol 15, Iss 1, Pp 1253-1259 (2024) |
| Druh dokumentu: | article |
| ISSN: | 2190-4286 54329884 |
| DOI: | 10.3762/bjnano.15.101 |
| Popis: | High spin polarization and low resistivity of Fe3O4 at room temperature have been an appealing topic in spintronics with various promising applications. High-quality Fe3O4 thin films are a must to achieve the goals. In this report, Fe3O4 films on different substrates (SiO2/Si(100), MgO(100), and MgO/Ta/SiO2/Si(100)) were fabricated at room temperature with radio-frequency (RF) sputtering and annealed at 450 °C for 2 h. The morphological, structural, and magnetic properties of the deposited samples were characterized with atomic force microscopy, X-ray diffractometry, and vibrating sample magnetometry. The polycrystalline Fe3O4 film grown on MgO/Ta/SiO2/Si(100) presented very interesting morphology and structure characteristics. More importantly, changes in grain size and structure due to the effect of the MgO/Ta buffering layers have a strong impact on saturation magnetization and coercivity of Fe3O4 thin films compared to cases of no or just a single buffering layer. |
| Databáze: | Directory of Open Access Journals |
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