| Autor: |
Tatiana N. Myasoedova, Mikhail N. Grigoryev, Nina K. Plugotarenko, Tatiana S. Mikhailova |
| Jazyk: |
angličtina |
| Rok vydání: |
2019 |
| Předmět: |
|
| Zdroj: |
Chemosensors, Vol 7, Iss 4, p 52 (2019) |
| Druh dokumentu: |
article |
| ISSN: |
2227-9040 |
| DOI: |
10.3390/chemosensors7040052 |
| Popis: |
In this study, we designed two types of gas-sensor chips with silicon−carbon film, doped with CuO, as the sensitive layer. The first type of gas-sensor chip consists of an Al2O3 substrate with a conductive chromium sublayer of ~10 nm thickness and 200 Ω/□ surface resistance, deposited by magnetron sputtering. The second type was fabricated via the electrochemical deposition of a silicon−carbon film onto a dielectric substrate with copper electrodes formed by photoelectrochemical etching. The gas sensors are sensitive to the presence of CO and CH4 impurities in the air at operating temperatures above 150 °C, and demonstrated p- (type-1) and n-type (type-2) conductivity. The type-1 gas sensor showed fast response and recovery time but low sensitivity, while the type-2 sensor was characterized by high sensitivity but longer response and recovery time. The silicon−carbon films were characterized by the presence of the hexagonal 6H SiC polytype with the impurities of the rhombohedral 15 R SiC phase. XRD analysis revealed the presence of a CuO phase. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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