Optical Properties of Monocrystalline Silicon Nanowires
| Autor: | P.O. Gentsar, A.V. Stronski, L.A. Karachevtseva, V.F. Onyshchenko |
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| Jazyk: | English<br />Ukrainian |
| Rok vydání: | 2021 |
| Předmět: | |
| Zdroj: | Фізика і хімія твердого тіла, Vol 22, Iss 3, Pp 453-459 (2021) |
| Druh dokumentu: | article |
| ISSN: | 1729-4428 2309-8589 |
| DOI: | 10.15330/pcss.22.3.453-459 |
| Popis: | The paper presents the results of a study of the optical reflection and transmission spectra of a silicon single crystal p-Si (100) with silicon nanowires grown on both sides and porous silicon p-Si (100) on a single crystal substrate in the spectral range 0.2 ÷ 1.7 μm. The layers of nanowires had a thickness of 5.5 µm, 20 µm, 50 µm and a porosity of 60 %. The porous silicon layers had a thickness of 5 μm, 50 μm and a porosity of 45 %, 55 % and 65 %. The change in the energy band structure in single-crystal silicon nanowires and in a single-crystal matrix of porous silicon is shown. |
| Databáze: | Directory of Open Access Journals |
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